Smart Filtering. As you select one or more parametric filters below, Smart Filtering will instantly disable any unselected values that would cause no results to be found. Applied Filters: Semiconductors Discrete Semiconductors Transistors MOSFET. Mounting Style = SMD/SMT. SMD Crystals Diodes Ferrites + Inductors Globes Indicator Lamps Integrated Circuits Lasers LEDs + LED Strip LED Display Boards Microphone N-channel MOSFET SMD N-channel MOSFET P-channel MOSFET SMD P-channel MOSFET.
Type Designator: 3401
Marking Code: 3401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 4.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 3 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
Package: SOT23
3401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3401 Datasheet (PDF)
0.1. nce3401ay.pdf Size:249K _1
Pb Free Producthttp://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30
0.2. 2sa1347 2sc3401.pdf Size:87K _sanyo
0.3. mch3401.pdf Size:41K _sanyo
Ordering number:ENN6443N-Channel Silicon MOSFETMCH3401Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 2.5V drive.[MCH3401]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings
0.4. ne34018.pdf Size:199K _nec
GaAs HJ-FET L TO S BANDLOW NOISE AMPLIFIERNE34018(New Plastic Package)NOISE FIGURE & ASSOCIATEDFEATURESGAIN vs. FREQUENCYVDS = 3 V, IDS = 20 mA LOW COST MINIATURE PLASTIC PACKAGE252544(SOT-343)2020 LOW NOISE FIGURE:GA0.6 dB typical at 2 GHz151533 HIGH ASSOCIATED GAIN:101016.0 dB typical at 2 GHz LG = 0.6 2 5m, WG
0.5. ut3401.pdf Size:292K _utc
UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMappli
0.6. ut3401z.pdf Size:301K _utc
UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp
0.7. smg3401.pdf Size:515K _secos
SMG3401-4.2A, -30V,RDS(ON) 50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETA suffix of '-C' specifies halogen & lead-freeASC-59DescriptionLDim Min MaxThe SMG3401 uses advanced trench technology 3A 2.70 3.10SBTop Viewto provide excellent on-resistance extremely 2 1B 1.40 1.60efficient and cost-effectiveness device. C 1.00 1.30The
0.8. tsm3401cx.pdf Size:235K _taiwansemi
TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info
0.9. cj3401.pdf Size:377K _jiangsu
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON). 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN D MARKING: R1 G S Maximum ratings ( Ta=25 unless otherwise noted
0.10. cj3401-hf.pdf Size:114K _jiangsu
MOSFETComchipS M D D i o d e S p e c i a l i s tCJ3401-HF (P-Channel )Reverse Voltage: - 30 VoltsForward Current: - 4.2 ARoHS DeviceHalogen FreeSOT-23Features0.118(3.00) - P-Channel 0.110(2.80) - High dense cell design for extremely low RDS(ON) 30.055(1.40) - Exceptional on-resistance and miximum DC current0.047(1.20)capability.1 20.079(2.00)0.071(1.80)Me
0.11. cj3401a.pdf Size:1001K _jiangsu
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 m@-10V60-30V 70 m -4.2A@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maxi
0.12. cjk3401a.pdf Size:780K _jiangsu
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m@-10V60 -30V 70 m -4.2A@-4.5Vm@-2.5V851. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devi
0.13. cjk3401ah.pdf Size:1634K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L 50m@-10V-30V -4.2A60 m@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maximum
0.14. ao3401.pdf Size:1439K _htsemi
AO340130V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A
0.15. gm3401.pdf Size:371K _gsme
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3401SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FET
0.16. wtc3401.pdf Size:1489K _wietron
WTC34013 DRAINP-Channel Enhancement DRAIN CURRENTMode Power MOSFET -4.2 AMPERESDRAIN SOURCE VOLTAGE1-30 VOLTAGEGATE2SOURCE3Features:*Advanced trench process technology1 *High Density Cell Design For Ultra Low 2On-ResistanceSOT-23Maximum Ratings(TA=25 Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage -30 VDSV Gate-Source Vo
0.17. se3401.pdf Size:454K _willas
FM120-MWILLASTHRUSE340 SOT-23 Plastic-Encapsulate MOSFETSFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize bo
0.18. wpm3401.pdf Size:1316K _willsemi
WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz
0.19. ao3401.pdf Size:497K _aosemi
AO340130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)
0.20. ao3401a.pdf Size:231K _aosemi
AO3401A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401A uses advanced trench technology toprovide excellent RDS(ON) , low gate charge and operation ID (at VGS=-10V) -4.0Agate voltages as low as 2.5V. This device is suitable for RDS(ON) (at VGS=-10V)
0.21. afp3401as.pdf Size:766K _alfa-mos
AFP3401AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-1.8 RDS(ON)=80@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105@VGS=-2.5V These devices are particularly suited for lo
0.22. afp3401s.pdf Size:634K _alfa-mos
AFP3401S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401S, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=65m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A,RDS(ON)=105m@VGS=-2.5V These devices are particularly suited fo
0.23. ao3401.pdf Size:1476K _shenzhen
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401AO3401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3401 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)
0.24. mtp3401n3.pdf Size:421K _cystek
Spec. No. : C388N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2017.06.19 Page No. : 1/9 P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP3401N3 ID@VGS=-10V, TA=25C -4.2A RDS(ON)@VGS=-10V, ID=-4.2A 46m(typ)RDS(ON)@VGS=-4.5V, ID=-4A 51m(typ)RDS(ON)@VGS=-2.5V, ID=-1A 59m(typ)Features Advanced trench process technology High density c
0.25. 3401.pdf Size:1135K _goford
GOFORD3401DESCRIPTION DThe 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)mm m 50 -4.2
0.26. 3401a.pdf Size:1595K _goford
GOFORD3401ADescription The 3401A uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ) (Typ)10V -30V58m 85 m 45 m
0.27. 3401l.pdf Size:1381K _goford
GOFORD3401LDescription DThe 3401L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)mm m 50 -4.2
0.28. sts3401a.pdf Size:95K _samhop
GrerrPPrPrProSTS3401AaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.79 @ VGS=-10VSuface Mount Package.-30V -3.2A127 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXI
0.29. sts3401.pdf Size:132K _samhop
GreenProductS TS 3401S amHop Microelectronics C orp.J un.15 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR YF E ATUR E SVDS S ID S uper high dense cell design for low R DS (ON).R DS (ON) ( m ) MaxR ugged and reliable.75 @ VG S = -10V-30V -3AS OT-23 Package.100 @ VG S = -4.5VDS OT-23GSABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
0.30. cs3401 sot-23-3.pdf Size:239K _can-sheng
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-3 Plastic-Encapsulate Transistors 3401 MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source volta
0.31. lp3401lt1g.pdf Size:315K _lrc
LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3401LT1GVDS (V) = -30V3RDS(ON)
0.32. sm3401nsqg.pdf Size:152K _sino
SM3401NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A, DRDS(ON) =2.8m(max.) @ VGS =10VRDS(ON) =3.6m(max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3.3x3.3-8(Saw-EP) Avalanche Rated Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Com
0.33. dmg3401lsn.pdf Size:94K _tysemi
Product specificationDMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (
0.34. wpm3401.pdf Size:439K _tysemi
Product specificationWPM3401P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co
0.35. ftk3401.pdf Size:236K _first_silicon
SEMICONDUCTORFTK3401TECHNICAL DATADDESCRIPTIONThe FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.2A 3RDS(ON)
0.36. ao3401a-3.pdf Size:1320K _kexin
SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-4 A (VGS =-10V)1 2 RDS(ON) 50m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 60m (VGS =-4.5V)1.9 -0.2 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum R
0.37. ao3401hf.pdf Size:1580K _kexin
SMD Type MOSFETP-Channel Enhancement MOSFETAO3401 HF (KO3401 HF)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain A
0.38. ao3401.pdf Size:1535K _kexin
SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M
0.39. ao3401a.pdf Size:1315K _kexin
SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 60m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum Ratings T
0.40. ao3401-3.pdf Size:1562K _kexin
SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain Absolu
0.41. ko3401.pdf Size:1515K _kexin
SMD Type MOSFETP-Channel Enhancement MOSFET KO3401 SOT-89Unit:mm Features1.70 0.1 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 65m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V)D0.42 0.1 RDS(ON) 120m (VGS =-2.5V) 0.46 0.11.GateG2.DrainS3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source
0.42. pja3401.pdf Size:194K _panjit
PPJA3401 30V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)Voltage -30 V Current -3.6A Features RDS(ON) , VGS@-10V, ID@-3.6A
0.43. am3401.pdf Size:555K _ait_semi
AiT Semiconductor Inc. AM3401 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 is the P-Channel logic enhancement -30V/-4.3A, R =47m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.5A, R =55m(typ.)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to -30V/-2.5A, R =70m(typ.
0.44. blm3401a.pdf Size:190K _belling
Pb Free Product BLM3401A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3401A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES V = -30V,I = -4.4A DS DR
0.45. blm3401.pdf Size:283K _belling
Pb Free Product BLM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
0.46. elm53401ca.pdf Size:1303K _elm
Single P-channel MOSFETELM53401CA-SGeneral description Features ELM53401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-1.8A resistance. Rds(on)
0.47. elm13401ca.pdf Size:373K _elm
Single P-channel MOSFETELM13401CA-SGeneral description Features ELM13401CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.2A (Vgs=-10V)resistance. Rds(on)
0.48. elm33401ca-s.pdf Size:981K _elm
Single P-channel MOSFETELM33401CA-SGeneral description Features ELM33401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)
0.49. gsm3401as.pdf Size:612K _globaltech_semi
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m@VGS=-2.5V These devices are particularly suited for low Super high density cell de
0.50. gsm3401s.pdf Size:1426K _globaltech_semi
GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m@VGS=-2.5V Super high density cell design for extremely These devi
0.51. mmp3401.pdf Size:147K _m-mos
MMP3401Package Level Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-4.5V, Ids@-4.0A = 75mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 120mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal C
0.52. stp3401a.pdf Size:372K _semtron
STP3401A -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP3401A is the P-Channel logic -30V/-4.3A, RDS(ON) =50m(typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.5A, RDS(ON) =58m(typ.)@VGS =-4.5V produced using high cell density. advanced trench -30V/-2.5A, RDS(ON) =73m(typ.)@VGS =-2.5V technology to provide exc
0.53. stp3401.pdf Size:372K _semtron
STP3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ.)@VGS =-2.5V provide exce
0.54. smc3401.pdf Size:372K _semtron
SMC3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ)@VGS =-2.5V provide excelle
0.55. st3401srg.pdf Size:206K _stansontech
ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an
0.56. st3401m23rg.pdf Size:169K _stansontech
ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon
0.57. ap3401.pdf Size:2303K _allpower
0.58. asdm3401zb.pdf Size:558K _ascend
ASDM3401ZB-30V P-CHANNEL MOSFETFEATURES Product Summary High dense cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability V DS -30 VR DS(on),Max@ VGS=-10 V 65 mApplication I D -4.2 APWM applications Load switch Power management top viewD G S SOT-23 Maximum ratings ( Ta=25 unless otherwise noted)
0.59. ao3401a.pdf Size:1984K _born
AO3401AMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max Unit-30Drain-Source Voltage BV VDSSGate- Source VoltageV VGS +12Drain Current (continuous)I -4.2 ADDrain Current (pulsed) I ADM-18Total Device D
Datasheet: 1115, 1515, G1601, 2300, 2301, 2302, 3035, 3400, 2SK1058, 3415, 6616, 6703, 6760, 7080, 8070, 8680, G29.
LIST
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
A P-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are holes moving through the channels.
This is in contrast to the other type of MOSFET, which are N-Channel MOSFETs, in which the majority ofcurrent carriers are electrons.
Before, we go over the construction of P-Channel MOSFETs, we must go over the 2 types that exist. There are 2 types of P-Channel MOSFETs, enhancement-type MOSFETs and depletion-type MOSFETs.
A depletion-type MOSFET is normally on (maximum current flows from source to drain) when no differencein voltage exists between the gate and source terminals. However, if a voltage is applied to its gate lead, the drain-source channel becomes more resistive, until the gate voltage is so high, the transistor completely shuts off. An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0V(VGS=0). However, if a voltage is applied to its gate lead, the drain-source channel becomesless resistive.
In this article, we will go over how both P-Channel enhancement-type and depletion-type MOSFETs are constructed and operate.
How P-Channel MOSFETs Are Constructed Internally
An P-Channel MOSFET is made up of a P channel, which is a channel composed of a majority of hole current carriers. The gate terminals are made up of N-type material.
Depending on the voltage quantity and type (negative or positive)determines how the transistor operates and whether it turns on or off.
How a P-Channel Enhancement-type MOSFET Works
How to Turn on a P-Channel Enhancement Type MOSFET
To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region(VG
So with a sufficient positive voltage, VS, to the source and load, and sufficient negative voltage applied to the gate, the P-Channel Enhancement-type MOSFET is fully functional and is in the active 'ON' mode of operation.
How to Turn Off a P-Channel Enhancement Type MOSFET
P Channel Mosfet Switch Circuit
To turn off a P-channel enhancement type MOSFET, there are 2 steps you can take. You can either cut off the bias positive voltage, VS, that powers the source. Or you can turn off the negative voltagegoing to the gate of the transistor.
How a P-Channel Depletion-type MOSFET Works
How to Turn on a P-Channel Depletion Type MOSFET
To turn on a P-Channel Depletion-Type MOSFET, for maximum operation, the gate voltage feeding the gate terminal should be 0V. With the gate voltage being 0V, the drain current is at is largest value and the transistor is in the active 'ON'region of conduction.
So, again, to turn on a P channel depletion-type MOSFET, positive voltage is applied to the source of the p-channel MOSFET. So we power the source terminal of the MOSFET with VS, a positive voltage supply. With a sufficient positive voltage, VS, and no voltage (0V) applied to the base, the P-channel Depletion-type MOSFET is in maximum operation and has the largest current.
How to Turn Off a P-Channel Depletion Type MOSFET
To turn off a P-channel MOSFET, there are 2 steps you can take. You can either cut off the bias positivevoltage, VDD, that powers the drain. Or you can apply a negative voltage to the gate. When a negativevoltage is applied to the gate, the current is reduced. As the gate voltage, VG, becomes more negative, the current lessens until cutoff, which is when then MOSFET is in the 'OFF' condition. This stops a large source-drain current.
So ,again, as negative voltage is applied to the gate terminal of the P channel depletion-type MOSFET, the MOSFET conducts less and less current across the source-drain terminal. When the gate voltage reaches a certain negative voltage threshold, it shuts the transistor off. Negative voltage shuts the transistor off. This is for a depletion-type P-channel MOSFET.
MOSFET transistors are used for both switching and amplifying applications. MOSFETs are perhaps the most popular transistors used today. Their high input impedance makes them draw very little input current, they are easy to make, can be made very small, and consume very little power.
Related Resources
How to Build a P-Channel MOSFET Switch Circuit
N-Channel MOSFET Basics
N Channel JFET Basics
P Channel JFET Basics
Types of Transistors
High Voltage P Channel Mosfet